substrate biasing中文是什么意思

發(fā)音:

中文翻譯
造句

襯底偏壓

biasing 附加勵磁; 加偏磁加偏壓; 偏壓
substrate n. 1.底層，地層。 2.【無線電】(半導(dǎo)體工藝中的)襯底，基底。 3.【生物學(xué)】(生態(tài)學(xué)中的)基層；【生物化學(xué)】受質(zhì)；被酶作用物。
alternative biasing 交替偏壓
auto biasing 自動偏磁
biasing battery 偏壓電池, 偏流電池
biasing capacitance 偏壓電容
biasing characteristic 控制特性; 偏置特性
biasing circuit (電子管)偏壓電路; 偏流電路; 偏置電路
biasing current 偏磁電流; 偏壓電流
biasing field 偏壓場
biasing holography 偏置全息照相術(shù)
biasing impedance 偏壓阻抗; 偏置阻抗
biasing logic 偏置邏輯
biasing resistance 偏壓電阻, 偏流電阻
biasing resistor 偏壓電阻; 偏置電阻
biasing spring 偏動彈簧; 偏動簧片
biasing sputtering 偏壓濺射
biasing technique 偏置技術(shù)
biasing transformator 偏壓變壓器
biasing transformer 偏壓變壓器
biasing units 多了個校準(zhǔn)單元
biasing voltage 偏壓
biasing winding 偏置繞組
dc biasing 直流偏壓; 直流偏置法
diode biasing 二極管偏壓

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例句與用法

Structure and properties of ta-c films deposited by filtered cathodic vacuum arc technology as a function of substrate bias
襯底偏壓對四面體非晶碳膜結(jié)構(gòu)和性能的影響
Moreover, high quality nanocrystalline p-sic film was attained with the integration of the pre-carbonization process and the substrate bias effect
進(jìn)一步結(jié)合襯底預(yù)碳化以及對襯底的偏壓作用，得到了高質(zhì)量的納米?sic薄膜。
In this paper, the nucleation process of diamond by filament cvd was analyzed, and enhanced flux of ions by negative substrate bias was investigated in theory
摘要木文對熱燈絲cvd沉積金剛石膜的核化過程進(jìn)行了分析，從理論上研究了負(fù)襯底偏壓增強(qiáng)活性離子的流量。
The main process parameters include hydrogen content in the gas sources, hydrogen plasma catalyst pretreatment, substrate bias, deposition temperature and plasma flow guiding
主要之制程參數(shù)包括氣源中之氫氣含量、氫電漿前處理、基材偏壓、沉積溫度以及電漿導(dǎo)流板之施加。
In the paper, the effect of ion bombarding on nucleation of diamond by negative substrate bias-enhanced was investigated in theory, and some experimental phenomena were explained
摘要從理論上研究了負(fù)襯底偏壓增強(qiáng)離子轟擊對金剛石核化的影響，并用理論解釋了一些實(shí)驗(yàn)現(xiàn)象。
The influence of various factors, such as substrate bias voltage and temperature, working gas pressure, types of si wafer, etc . on the preparation of cbn has been studied systematically
系統(tǒng)地研究了襯底偏壓、襯底溫度、工作氣壓、si晶片的類型等多種因素對制備cbn薄膜的影響。
Sic film was coated on the surface of 316l stainless steel by substrate bias-assisted radio frequency ( rf ) sputtering as tritium permeation barrier ( tpb ) of first wall and blanket in fusion reactor
采用分步偏壓輔助射頻(rf)濺射法在316l不銹鋼表面制備了sic薄膜。掃描電鏡(sem)觀察表明膜致密、均勻、與基體結(jié)合牢固。
It also shows that hardness increases with the increase of film thickness, substrate temperature and substrate bias . and among these processing parameters, the substrate temperature and bias have the more prominent influences
同時，隨著膜厚的增加，基片溫度的提高以及對基片施加的偏壓的增高，薄膜的硬度都有不同程度的提高。
The solution to the problem of hydrogen contained in the film was initially proposed for pecvd technique . meanwhile, the adoption of substrate bias assisted deposition further eliminated the impurity o in the film
首次解決了采用pecvd法低溫制備?sic薄膜中的含氫問題；同時，采用偏壓輔助的技術(shù)，進(jìn)一步解決了薄膜中的含氧問題。
1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied . boron nitride ( bn ) films were deposited on ( 100 )-oriented p-type silicon substrate ( 8i sqcm ) with rf sputtering system . the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon
研究了襯底負(fù)偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si（100）（815cm）襯底上，靶材為h-bn靶（純度達(dá)99.99），濺射氣體為氬氣和氮?dú)饣旌隙桑茦舆^程中，襯底加直流負(fù)偏壓。

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